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BYTe Semiconductor Co., Ltd., a supplier of SPI NOR Flash Memory products has launched a faster, higher-performance and extremely low-power line of devices: BY25FQ32EL/64EL/128EL, which supports 1.8V power supply voltage, frequency up to 133MHz, and faster erase and write times than other devices on the market today. The initial devices being released cover 32Mb. 64Mb, and 128Mb, with additional densities being released soon.
While the industry remains focused on the ETOX 65nm and 55nm processes, BYTe has become the leader in NOR Flash development using the ETOX 50nm process for these newest products. Program/Erase speed is almost twice as fast as other products on the market. In addition, power consumption during Program/Erase is half that of other devices and the Standby/Deep PowerDown current is extremely low, offering better adaptation for low power/battery applications. In addition, the device performance exceeds 133 MHz and is available in standard industrial temperature range to 85°C and extended temperature range up to 125°C.
Working to achieve the highest performance and quality, BYTe has effectively optimized the die size, which better meets the mechanical requirements of KGD (Known Good Die) customers at the lowest cost up to 125°C.
For more details, contact your local sales representative or authorized distributor. BYTe Semiconductor may also be reached directly at byte.sales@byte-semi.com
BYTe Semiconductor Co., Ltd. was established in 2014. The company is headquartered in San Jose, California and has R&D centers in Zhuhai, Shenzhen, Shanghai, Hefei, Beijing, and Hong Kong. We have partnered with Digi-Key for global distribution of our Flash products.
The company's two major series of NOR Flash products, ETOX and SONOS, provide 1.8V, 3V and Wide Vcc products in densities ranging from 512kb to 2Gb, providing customers with high quality, low cost storage products to meet the application requirements in consumer electronics, industrial control, communications and the Internet of Things.